APTM100TA35SCTPG aptm100ta35scpg aptm100ta35sc(t)pgC rev 2 november, 2013 www.microsemi.com 1 C g4 g5 g3 g1 ntc2 ntc1 w v u s3 0/vbus 3 0/vbus 2 s4 0/vbus 1 s2 g2 vbus 1 s1 vbus 3 s5 g6 s6 vbus 2 pins ntc1 & ntc2 are only mounted on APTM100TA35SCTPG power module. all ratings @ t j = 25c unless otherwise specified these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com v dss = 1000v r dson = 350m typ @ tj = 25c i d = 22a @ tc = 25c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? sic parallel schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? high level of integration ? internal thermistor for temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? very low (12mm) profile ? each leg can be easily paralleled to achieve a phase leg of three times the current capability ? module can be configured as a three phase bridge ? rohs compliant triple phase leg mosfet power module downloaded from: http:///
APTM100TA35SCTPG aptm100ta35scpg aptm100ta35sc(t)pgC rev 2 november, 2013 www.microsemi.com 2 C absolute maximum ratings (per mosfet) electrical characteristics (per mosfet) symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v,v ds = 1000v t j = 25c 100 a v gs = 0v,v ds = 800v t j = 125c 500 r ds(on) drain C source on resistance v gs = 10v, i d = 11a 350 420 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 2.5ma 3 5 v i gss gate C source leakage current v gs = 30v, v ds = 0v 100 na dynamic characteristics (per mosfet) symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1mhz 5.2 nf c oss output capacitance 0.88 c rss reverse transfer capacitance 0.16 q g total gate charge v gs = 10v v bus = 500v i d = 22a 186 nc q gs gate C source charge 24 q gd gate C drain charge 122 t d(on) turn-on delay time inductive switching @ 125c v gs = 15v v bus = 670v i d = 22a r g = 5 18 ns t r rise time 12 t d(off) turn-off delay time 155 t f fall time 40 e on turn-on switching energy inductive switching @ 25c v gs = 15v, v bus = 670v i d = 22a, r g = 5 ? 540 j e off turn-off switching energy 623 e on turn-on switching energy inductive switching @ 125c v gs = 15v, v bus = 670v i d = 22a, r g = 5 ? 854 j e off turn-off switching energy 779 r thjc junction to case thermal resistance 0.32 c/w symbol parameter max ratings unit v dss drain - source breakdown voltage 1000 v i d continuous drain current t c = 25c 22 a t c = 80c 17 i dm pulsed drain current 88 v gs gate - source voltage 30 v r dson drain - source on resistance 420 m p d maximum power dissipation t c = 25c 390 w i ar avalanche current (repetitive and non repetitive) 25 a e ar repetitive avalanche energy 50 mj e as single pulse avalanche energy 3000 downloaded from: http:///
APTM100TA35SCTPG aptm100ta35scpg aptm100ta35sc(t)pgC rev 2 november, 2013 www.microsemi.com 3 C series diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 1000 v i rm maximum reverse leakage current v r =1000v 250 a i f dc forward current t c = 80c 30 a v f diode forward voltage i f = 30a 1.9 2.3 v i f = 60a 2.2 i f = 30a t j = 125c 1.7 t rr reverse recovery time i f = 30a v r = 667v di/dt = 200a/s t j = 25c 290 ns t j = 125c 390 q rr reverse recovery charge t j = 25c 670 nc t j = 125c 2350 r thjc junction to case thermal resistance 1.2 c/w sic parallel diode rati ngs and characteristics (per sic diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v t j = 25c 64 400 a t j = 175c 112 2000 i f dc forward current tc = 125c 20 a v f diode forward voltage i f = 20a t j = 25c 1.6 1.8 v t j = 175c 2.3 3 q c total capacitive charge i f = 20a, v r = 600v di/dt =1000a/s 80 nc c total capacitance f = 1mhz, v r = 200v 192 pf f = 1mhz, v r = 400v 138 r thjc junction to case thermal resistance 1 c/w thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m6 3 5 n.m wt package weight 250 g downloaded from: http:///
APTM100TA35SCTPG aptm100ta35scpg aptm100ta35sc(t)pgC rev 2 november, 2013 www.microsemi.com 4 C temperature sensor ntc (see application note apt0406 on www.microsemi.com). pins ntc1 & ntc2 are only mounted on APTM100TA35SCTPG power module. symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 sp6-p package outline (dimensions in mm) pins ntc1 & ntc2 are only mounte d on APTM100TA35SCTPG power module. 9 places (3:1) all dimensions marked " * " are tolerenced as : see application note 1902 - mounting instructions for sp6-p (12mm) power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTM100TA35SCTPG aptm100ta35scpg aptm100ta35sc(t)pgC rev 2 november, 2013 www.microsemi.com 5 C typical mosfet performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 5.5v 6v 6.5v 7v 0 10 20 30 40 50 60 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =15, 10&8v low voltage output characteristics transfert characteristics t j =25c t j =125c 0 10 20 30 40 50 60 70 80 0123456789 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds(on) vs drain current v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 102030405060 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 11a 0 5 10 15 20 25 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature downloaded from: http:///
APTM100TA35SCTPG aptm100ta35scpg aptm100ta35sc(t)pgC rev 2 november, 2013 www.microsemi.com 6 C 0.95 1.00 1.05 1.10 1.15 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltage (normalized) breakdown voltage vs temperature on resistance vs temperature 1.0 1.5 2.0 2.5 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =11a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10ms 1ms 100s 1 10 100 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r ds on single pulse t j =150c t c =25c ciss crss coss 100 1000 10000 100000 0 1 02 03 04 05 0 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =200v v ds =500v v ds =800v 0 2 4 6 8 10 12 14 0 50 100 150 200 250 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =22a t j =25c downloaded from: http:///
APTM100TA35SCTPG aptm100ta35scpg aptm100ta35sc(t)pgC rev 2 november, 2013 www.microsemi.com 7 C delay times vs current t d(on) t d(off) 0 20 40 60 80 100 120 140 160 180 0 1 02 03 04 05 0 i d , drain current (a) t d(on) and t d(off) (ns) v ds =670v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 70 80 0 1 02 03 04 05 0 i d , drain current (a) t r and t f (ns) v ds =670v r g =5 ? t j =125c l=100h switching energy vs current e on e on e off 0 0.5 1 1.5 2 01 02 03 04 05 0 i d , drain current (a) switching energy (mj) v ds =670v r g =5 ? t j =125c l=100h e on e off 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 35 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =670v i d =22a t j =125c l=100h hard switching zvs 0 50 100 150 200 250 5 8 10 13 15 18 20 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =670v d=50% r g =5 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage downloaded from: http:///
APTM100TA35SCTPG aptm100ta35scpg aptm100ta35sc(t)pgC rev 2 november, 2013 www.microsemi.com 8 C typical series diode performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =25c t j =125c 0 10 20 30 40 50 60 0.0 0.3 0.5 0.8 1.0 1.3 1.5 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 15 a 30 a 60 a 0 5 10 15 20 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =133v trr vs. current rate of charge 15 a 30 a 60 a 0 10 20 30 40 50 60 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =133v q rr vs. current rate charge 15 a 30 a 60 a 0 125 250 375 500 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (nc) t j =125c v r =133v capacitance vs. reverse voltage 0 100 200 300 400 500 600 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) downloaded from: http:///
APTM100TA35SCTPG aptm100ta35scpg aptm100ta35sc(t)pgC rev 2 november, 2013 www.microsemi.com 9 C typical sic parallel diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 50 100 150 200 400 600 800 1000 1200 1400 1600 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 200 400 600 800 1000 1200 1400 1 10 100 1000 v r reverse voltage c, capacitance (pf) downloaded from: http:///
APTM100TA35SCTPG aptm100ta35scpg aptm100ta35sc(t)pgC rev 2 november, 2013 www.microsemi.com 10 C disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
|
